ECEN 3250 - Circuits/Electronics 3
Required - 5 credit hours
On-Line Course Materials
Textbook: Sedra and Smith, Microelectronic Circuits , Oxford University Press, 2004.
Course objectives:
- Understand the terminal characteristics of diodes, BJTs, and MOSFETs.
- Learn how to design and analyze single-stage amplifiers using BJTs and MOSFETs.
- Learn how to design and analyze simple digital circuits using diodes, BJTs, and MOSFETs.
Prerequisite: ECEN 2260
, Circuits/Electronics 2
Lecture Topics Covered: Diode Circuits (12 lectures)
- (2) Ideal diode and analysis of diode circuits
- (1) Terminal characteristics of diodes
- (1) Diode models: piecewise-linear models: constant-voltage crop model, battery + resistance small-signal model
- (1) Analysis of diode circuits based on non-ideal models
- (1) Zener diodes
- (2) Applications: rectifier circuits, peak rectifiers, Zener voltage regulators, etc.
- (4) Physical operation of diodes: intrinsic and doped semiconductors, energy bands, electronics and holes; conduction mechanisms; drift and diffusion, PN junction; temperature effects.
- (3) Physical operation and characteristics of enhancement-mode NMOS and PMOS transistors, modes of operation
- (1) CMOS integrated-circuit technology
- (2) MOS transistor circuits at DC
- (1) Construction of DC current sources using MOS transistors
- (1) MOS transistor as a switch and as an amplifier
- (1) Small-signal model
- (10) MOS transistor amplifiers: discrete and integrated-circuits approaches: common-source, common-drain, and common-gate single-stage configuration; analysis of voltage gain, input and output resistance loading effects; active loading techniques; examples of two-stage amplifiers; differential amplifier
- (5) CMOS digital logic gates: CMOS inverter, static characteristics, propagation delays, and power consumption; construction of basic CMOS logic gates
- (1) Physical operation and characteristics of NPN and PNP transistors, modes of operation
- (1) BJT circuits at DC
- (1) BJT as a switch and as an amplifier
- (1) Hybrid-pi small-signal model
- (2) Single-stage BJT amplifiers, comparison of BJT and MOS transistors
Lab Syllabus:
Circuit simulations using PSpice
- Introduction to Spice language
- Netlists (R, C, diodes, MOS transistors, BJTs, subcircuits),
- Models (diodes, MOS transistors, BJTs), and
- Analysis types (dc, ac and transient)
- Use of graphical schematic entry and post-processing tools
- Diode characteristics and basic diode circuits
- Experimental identification of basic diode Spice model parameters
- Design of rectifiers and power supplies
- Ripple, line and load regulation specs
- MOS characteristics
- Experimental identification of basic MOSFET Spice model parameters
- Design of MOS current sources
- Output voltage range and output resistance specs
- Design of discrete and integrated-circuit MOS amplifiers
- Gain, input and output resistance, output voltage range specs
- Active loading techniques
- CMOS logic gates
- Static characteristics, propagation delays and power consumption
- Design of audio power amplifiers with BJTs
Contribution of course to meeting the professional component: Contributes 5 semester hours to criterion 4(b) “one and one-half years of engineering topics, consisting of engineering sciences and engineering design appropriate to the student's field of study.”
Relationship of course to program outcomes:
| 3a | 3b | 3c | 3d | 3e | 3f | 3g1 | 3g2 | 3h | 3i | 3j | 3k |
| H | H | M | L | H | H |
Prepared by: ECEN3250 Assessment team: Dragan Maksimovic (chair),
Frank Barnes, Ewald Fuchs, Arnoldo Majerfeld, Bart Van Zeghbroeck, Regan
Zane, and by V. Heuring
May 16, 2005.
